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L. R. Wronski, Appl. Phys. Lett. 31, 292 (1977). D. Dunstan, to be published. W. Rhem and R. Fischer, Phys. Stat. (b) 94, 595 (1979). W. Rhem, R. Fischer and J. Beich1er, to be published. I. Solomon, F. Perrin and B. Bourdon, 14th Int. Conf. Phys. Semicond. (Edinburgh 1978), Published in Inst. Phys. Conf. Ser. N° 43 (1979) p. 689. B. Goodman, H. Fritzsche and H. Ozaki, J. of Non-Cryst. Sol. 35 and 36, 599 (1980). r:D. Persans and H. S. Bull. 24, 399 (1979). G. H. Brodsky, Phil. Mag. 1980, in press.

9) If Ueff is negative, a potential barrier between the two possible neutral defects can lead to important transient effects. (10) These transient effects can persist for a time sufficiently long that the neutral defects can be considered to be metastable even at room temperature. Acknowledgments I should like to thank Robert C. Frye, Marc Kastner, Stanford R. Ovshinsky, and Marvin Silver for useful conversations. The original research discussed was supported by grants from the U. S. Army Research Office and the U.

The same kind of difficulties appears in photoconductivity measurements [6,12], and surface effects are found even in films of doped material [13,14] although the effect of the band-bending is quantitatively much smaller. It is thus a paradoxical conclusion to realize that, after a few years of active studies, not so much is known about bulk transport and photoconductivity properties of hydrogenated amorphous silicon. This is rather surprising for a material of economic importance, which is one of the best candidates for the fabrication of inexpensive solar cells.

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