By Hellmut Fritzsche (auth.), Professor Fumiko Yonezawa (eds.)
The Kyoto summer season Institute 1980 (KSI '80), dedicated to "Fundamental Physics of Amorphous Semiconductors", was once held at examine Institute for primary Physics (RIFP), Kyoto college, from 8-11 September, 1980. The KSI '80 used to be the successor of the previous Institutes that have been held in July 1978 on "Particle Physics and Accelerator tasks" and in September 1979 on "Physics of Low-Dimensional Systems". The KSI '80 used to be attended via two hundred members, of which 36 have been from out of the country: Canada, France, Korea, Poland, U.K., U.S.A, U.S.S.R., and the Federal Republic of Germany. The KSI '80 used to be equipped by means of RIFP and directed by means of the Amorphous Semicon ductor team in Japan. many years in the past, we began to manage an interna tional assembly on amorphous semiconductors' as a satell ite assembly of the foreign convention on "Physics of Semiconductors" hung on September 1-5, 1980 in Kyoto. We later made up our minds to carry the assembly within the type of the Kyoto summer time Institute. The Kyoto summer time Institute is aimed to be whatever among a college and a convention. for that reason, the article of the KSI '80 used to be to supply a sequence of invited lectures and casual seminars on primary physics of amorphous semiconductors. No contributed paper used to be accredited, yet seminars have been open.
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Additional resources for Fundamental Physics of Amorphous Semiconductors: Proceedings of the Kyoto Summer Institute Kyoto, Japan, September 8—11, 1980
L. R. Wronski, Appl. Phys. Lett. 31, 292 (1977). D. Dunstan, to be published. W. Rhem and R. Fischer, Phys. Stat. (b) 94, 595 (1979). W. Rhem, R. Fischer and J. Beich1er, to be published. I. Solomon, F. Perrin and B. Bourdon, 14th Int. Conf. Phys. Semicond. (Edinburgh 1978), Published in Inst. Phys. Conf. Ser. N° 43 (1979) p. 689. B. Goodman, H. Fritzsche and H. Ozaki, J. of Non-Cryst. Sol. 35 and 36, 599 (1980). r:D. Persans and H. S. Bull. 24, 399 (1979). G. H. Brodsky, Phil. Mag. 1980, in press.
9) If Ueff is negative, a potential barrier between the two possible neutral defects can lead to important transient effects. (10) These transient effects can persist for a time sufficiently long that the neutral defects can be considered to be metastable even at room temperature. Acknowledgments I should like to thank Robert C. Frye, Marc Kastner, Stanford R. Ovshinsky, and Marvin Silver for useful conversations. The original research discussed was supported by grants from the U. S. Army Research Office and the U.
The same kind of difficulties appears in photoconductivity measurements [6,12], and surface effects are found even in films of doped material [13,14] although the effect of the band-bending is quantitatively much smaller. It is thus a paradoxical conclusion to realize that, after a few years of active studies, not so much is known about bulk transport and photoconductivity properties of hydrogenated amorphous silicon. This is rather surprising for a material of economic importance, which is one of the best candidates for the fabrication of inexpensive solar cells.