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Tang et al. 11 eV at 300 K [140]. Wethkamp et al. 13 eV at 300 K [141], while Brunner et al. 13 eV at 300 K [142]. Kuokstis et al. 07 eV [143]. Guo et al. reported the temperature dependence of the reflectance spectra, but fitted it to the Bose–Einstein expression [144]. Relatively large lowtemperature energy gaps were also found by Jiang et al. 70 meV K−1 and β = 1480 K), Chen et al. 18 eV), and Onuma et al. 211 eV). However, other workers reported lower values for the AlN energy gap. The differences between ultraviolet PL measurements and optical absorption/transmission measurements were discussed by Chen et al.

Salvador et al. 732 meV K−1 and β = 700 K, based on PL results. 156 meV K−1 and β = 738–1187 K from absorption measurements on samples grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). The contactless electroreflectance study of Li et al. 28 meV K−1 and β = 1190 K for the A exciton transition energy, while Zubrilov et al. 74 meV K−1 and β = 600 K based on exciton luminescence spectra. Photoluminescence data from a study of free and bound excitons by Reynolds et al.

3 Band Parameters with x, and additionally determined that epitaxial layers may have a slightly smaller valence band offset than bulk materials [305]. 5 eV range [306–323]. 20. However, after noticing a weak temperature dependence of the alloy PL peak, as well as a Stokes shift between the PL and photoreflectance lines, Shan et al. [308] suggested that the PL may in fact be emitted primarily from material that is locally In-rich. Such ordering would naturally lead to an overestimate of the bowing parameter, which was disputed by McCluskey et al.