By Cunyun Ye
This can be the 1st publication on tunable exterior hollow space semiconductor diode lasers, offering an updated survey at the physics, know-how, and function of commonly acceptable coherent radiation resources of tunable exterior hollow space diode lasers. the aim is to supply a radical account of the state of the art of tunable exterior hollow space diode lasers that's completed by way of combining this account with simple recommendations of semiconductor diode lasers and its tunability with monolithic constructions. the sensible and obtainable details during this quantity will let the reader to check exterior hollow space diode laser, to accumulate the structures of exterior hollow space diode laser in addition to to increase complex platforms for his or her specific functions. This booklet will entice undergraduate and graduate scholars, scientists and engineers alike.
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1995). in the phase section, the lasing wavelength can be continuously fine tuned over the longitudinal mode spacing. Combining the three types of tuning, one can access 16 wavelengths spaced by 1 nm from 1545 nm to 1560 nm as shown in Fig. 14. 1 nm, the SMSR was from 20 dB to 35 dB. It can be seen that a multi-section DBR laser typically requires for or more electrodes to achieve a wide tuning range and a full coverage of wavelengths in the range. The tuning characteristic is quasi- or discontinuous, and typically contains many steps.
Lett. 64, 21, pp. 2764. Kim et al. (1994). ter bandwidth also is proportional to F. Therefore, as F is increased, more axial modes of the laser tend to fall under the filter passband and become candidates for lasing. The CW light-current characteristic of the laser with no timing current exhibits a threshold current of 30 mA with a ∼ 9% external differential quantum efficiency. Output light is TM- polarized because TM gain dominates over TE gain in the tensile-strained quantum well material. 4 V reverse-biased voltage into the VCF section.
4) Tunable Monolithic Semiconductor Diode Lasers 31 Active (pumped) region (a) Λ 111111111111111111111 000000000000000000000 000000000000000000000 111111111111111111111 000000000000000000000 111111111111111111111 000000000000000000000 111111111111111111111 000000000000000000000 111111111111111111111 000000000000000000000 111111111111111111111 000000000000000000000 111111111111111111111 000000000000000000000 111111111111111111111 000000000000000000000 111111111111111111111 000000000000000000000 111111111111111111111 111111111111111111111 000000000000000000000 000000000000000000000 111111111111111111111 000000000000000000000 111111111111111111111 Confining layer (n−GaAlAs) Passive waveguide (p−GaAlAs) Active layer (p−GaAs) Guiding layer Substrate Passive region Pumped region Confining layer (n−GaAlAs) Passive region Bragg reflectors (b) 000000000 111111111 000000000 111111111 000000 111111 111111111 000000000 000000000 111111111 000000 111111 000000000 111111111 000000000 111111111 000000 111111 000000000 111111111 000000000 111111111 000000 111111 000000000 111111111 000000000000000000000 111111111111111111111 000000000000000000000 111111111111111111111 000000000000000000000 111111111111111111111 000000000000000000000 111111111111111111111 000000000000000000000 111111111111111111111 000000000000000000000 111111111111111111111 0000000000000000000000 1111111111111111111111 0000000000000000000000 1111111111111111111111 0000000000000000000000 1111111111111111111111 0000000000000000000000 1111111111111111111111 Substrate Confining layer (n−GaAlAs) Passive waveguide (p−GaAlAs) Active layer (p−GaAs) Guiding layer Confining layer (n−GaAlAs) Fig.