Download Thin Film Ferroelectric Materials and Devices by Scott R. Summerfelt (auth.), R. Ramesh (eds.) PDF

By Scott R. Summerfelt (auth.), R. Ramesh (eds.)

The previous 5 years have witnessed a few dramatic advancements within the normal sector of ferroelectric skinny motion pictures fabrics and units. Ferroelectrics aren't new fabrics by means of any stretch ofimagination. certainly, they've been recognized because the early partofthis century and renowned ferroelectric fabrics resembling Barium Titanate were in use because the moment international conflict. within the past due sixties and seventies, a substantial amountofresearch and improvement attempt was once made to create a pretty good nation nonvolatile reminiscence utilizing ferroelectrics in a range uncomplicated matrix-addressed scheme. those makes an attempt failed essentially as a result of difficulties linked to both the fabrics ordue to gadget architectures. The early eighties observed the appearance of latest fabrics processing ways, reminiscent of sol-gel processing, that enabled researchers to manufacture sub-micron skinny movies of ferroelectric fabrics on a silicon substrate. those pioneering advancements signaled the onsetofa revival within the areaofferroelectric skinny movies, particularly ferroelectric nonvolatile stories. study and improvement attempt in ferroelectric fabrics and units has now hit a feverish pitch, Many college laboratories, nationwide laboratories and complex R&D laboratories oflarge IC brands are deeply interested by the pursuit of ferroelectric gadget applied sciences. Many businesses all over the world are making an investment substantial manpower and assets into ferroelectric applied sciences. a few have already introduced items starting from embedded stories in micro­ controllers, low density stand-alone stories, microwave circuit components, andrf identity tags. there's now huge optimism that ferroelectric units andproducts will occupy an important market-share within the new millennium.

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40 35. 36. 37. 38. 39. 40. 41. 42. 43. 44. 45. 46. 47. 48. 49. 50. 51. 52. 53. 54. 55. 56. 57. 58. 59. 60. 61. 62. 63. 64. 65. 66. 67. 68. 69. 70. 71. T. Eimori, Y. Ohno, H. Kimura, J. Matsufusa, S. Kishimura, A. Yoshida, H. Sumitani, T. Murayama. Y. Hayashide, K. Moriizumi. T. Katayama. M. Asakura, T. Horikawa, T. Shibano. H. ltob, K. Sato, K. Namba, T. Nishimura, S. Satoh and H. Miyoshi, International Electron Device Meeting, , 631-634 (1993). T. Horikawa, T. Makita, T. Kuroiwa and N. Mikami, Japanese J.

However, with respect to BST films deposited at high temperatures and with complete columnar structures, grain size determined by Shellar's formula indicates crystallite size and may be estimated smaller than grain size observed through TEM. Therefore, in some cases, grain size does not correlate with dielectric constant. J t=3~Onm .. ~ .... 600 ··········f·····~·········+·········-r···········i···· .. .. 5u II) ] Q 200 ~ . · ·. l"~ . . L---t~32~ ~=~ti::r~~~:~ t=2IOnm! .. . ao_. ..........

T. -A. Nicolet, 1. ofElectrochernical Society, 130, 1210-1214 (1983). 122. Y. Ohno, T. Horikawa, H. Shinkawa, K. Kashihara, T. Kuroiwa, T. Okudaira, Y. Hashizume, K. Fukumoto, T. Eimori, T. Shibano, K. Arimoto, H. Hoh, T. Nishimura and H. Miyoshi, VLSI Technology Digest ofTechnical Papers, , 149 (1994). 123. G. S. Sandhu and P. C. Fazan, United States Patent, 5381302,Aug. 10, 1993 (1995). 124. K. Kashihara, T. Okudaira, Y. Tsunernine, Y. Ohno, H. Hob, T. Nishimura, M. Hirayama, T. Horikawa, T. Shibano and K.

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